Nambari ya Sehemu :
TPW4R008NH,L1Q
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 80V 116A 8DSOP
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
116A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
59nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5300pF @ 40V
Kuondoa Nguvu (Max) :
800mW (Ta), 142W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-DSOP Advance
Kifurushi / Kesi :
8-PowerVDFN