Infineon Technologies - IRF1902PBF

KEY Part #: K6412240

[13514pcs Hisa]


    Nambari ya Sehemu:
    IRF1902PBF
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET N-CH 20V 4.2A 8-SOIC.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Arrays, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies IRF1902PBF electronic components. IRF1902PBF can be shipped within 24 hours after order. If you have any demands for IRF1902PBF, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF1902PBF Sifa za Bidhaa

    Nambari ya Sehemu : IRF1902PBF
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET N-CH 20V 4.2A 8-SOIC
    Mfululizo : HEXFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 20V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.2A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 2.7V, 4.5V
    Njia ya Kutumia (Max) @ Id, Vgs : 85 mOhm @ 4A, 4.5V
    Vgs (th) (Max) @ Id : 700mV @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 7.5nC @ 4.5V
    Vgs (Max) : ±12V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 310pF @ 15V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 2.5W (Ta)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : 8-SO
    Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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