Infineon Technologies - IPI120N08S403AKSA1

KEY Part #: K6417481

IPI120N08S403AKSA1 Bei (USD) [32194pcs Hisa]

  • 1 pcs$1.28015
  • 500 pcs$0.94149

Nambari ya Sehemu:
IPI120N08S403AKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH TO262-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Viwango - RF and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPI120N08S403AKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPI120N08S403AKSA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH TO262-3
Mfululizo : Automotive, AEC-Q101, OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 80V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.8 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 223µA
Malango ya Lango (Qg) (Max) @ Vgs : 167nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 11550pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 278W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO262-3-1
Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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