DMN3025LFG-13 Bei (USD) [490925pcs Hisa]
- 1 pcs$0.07534
- 3,000 pcs$0.06743
- Nambari ya Sehemu:
- DMN3025LFG-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 30V 7.5A POWERDI.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Zener - Moja, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Transistors - IGBTs - Moja, Transistors - Kusudi Maalum and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN3025LFG-13 electronic components. DMN3025LFG-13 can be shipped within 24 hours after order. If you have any demands for DMN3025LFG-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3025LFG-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMN3025LFG-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 30V 7.5A POWERDI
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
18 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
11.6nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
605pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerWDFN
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