Nambari ya Sehemu :
SSM6H19NU,LF
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 40V 2A 6UDFN
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.8V, 8V
Njia ya Kutumia (Max) @ Id, Vgs :
185 mOhm @ 1A, 8V
Vgs (th) (Max) @ Id :
1.2V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
2.2nC @ 4.2V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
130pF @ 10V
Kuondoa Nguvu (Max) :
1W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-UDFN (2x2)
Kifurushi / Kesi :
6-UDFN Exposed Pad