Vishay Siliconix - SUD90330E-GE3

KEY Part #: K6419688

SUD90330E-GE3 Bei (USD) [125329pcs Hisa]

  • 1 pcs$0.29512

Nambari ya Sehemu:
SUD90330E-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET N-CH 200V 35.8A TO252AA.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Thyristors - SCR, Transistors - Kusudi Maalum, Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Transistors - IGBTs - Moja, Viwango - Zener - Arrays and Transistors - JFETs ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SUD90330E-GE3 electronic components. SUD90330E-GE3 can be shipped within 24 hours after order. If you have any demands for SUD90330E-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SUD90330E-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SUD90330E-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET N-CH 200V 35.8A TO252AA
Mfululizo : ThunderFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 35.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 7.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 37.5 mOhm @ 12.2A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 32nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1172pF @ 100V
Makala ya FET : -
Kuondoa Nguvu (Max) : 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252AA
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63