[3906pcs Hisa]
- Nambari ya Sehemu:
- TPC8212-H(TE12LQ,M
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET 2N-CH 30V 6A SOP8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Viwango - RF, Transistors - FET, MOSFETs - Moja, Transistors - Ushirikiano uliopangwa, Moduli za Dereva za Nguvu and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TPC8212-H(TE12LQ,M electronic components. TPC8212-H(TE12LQ,M can be shipped within 24 hours after order. If you have any demands for TPC8212-H(TE12LQ,M, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8212-H(TE12LQ,M Sifa za Bidhaa
Nambari ya Sehemu :
TPC8212-H(TE12LQ,M
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET 2N-CH 30V 6A SOP8
Mfululizo :
-
Hali ya Sehemu :
Obsolete
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
6A
Njia ya Kutumia (Max) @ Id, Vgs :
21 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
2.3V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
16nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
840pF @ 10V
Nguvu - Max :
450mW
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.173", 4.40mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SOP (5.5x6.0)
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