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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. NTMS4801NR2G

ON Semiconductor - NTMS4801NR2G

KEY Part #: K6403555

NTMS4801NR2G Bei (USD) [375377pcs Hisa]

  • 1 pcs$0.09903
  • 2,500 pcs$0.09853
Nambari ya Sehemu:
NTMS4801NR2G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 7.5A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - Zener - Arrays, Viwango - RF, Moduli za Dereva za Nguvu and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in ON Semiconductor NTMS4801NR2G electronic components. NTMS4801NR2G can be shipped within 24 hours after order. If you have any demands for NTMS4801NR2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMS4801NR2G Sifa za Bidhaa

Nambari ya Sehemu : NTMS4801NR2G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 7.5A 8-SOIC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 7.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 9 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2201pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 800mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SOIC
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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