Infineon Technologies - BSC030N04NSGATMA1

KEY Part #: K6416867

BSC030N04NSGATMA1 Bei (USD) [188588pcs Hisa]

  • 1 pcs$0.19613
  • 5,000 pcs$0.16658

Nambari ya Sehemu:
BSC030N04NSGATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 40V 100A TDSON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Moja, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC030N04NSGATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC030N04NSGATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 40V 100A TDSON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 23A (Ta), 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 4V @ 49µA
Malango ya Lango (Qg) (Max) @ Vgs : 61nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 4900pF @ 20V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8
Kifurushi / Kesi : 8-PowerTDFN

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