NXP USA Inc. - PHT11N06LT,135

KEY Part #: K6400128

[8869pcs Hisa]


    Nambari ya Sehemu:
    PHT11N06LT,135
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 55V 4.9A SOT223.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR, Viwango - RF, Viwango - Bridge Rectifiers and Thyristors - TRIAC ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PHT11N06LT,135 electronic components. PHT11N06LT,135 can be shipped within 24 hours after order. If you have any demands for PHT11N06LT,135, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PHT11N06LT,135 Sifa za Bidhaa

    Nambari ya Sehemu : PHT11N06LT,135
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 55V 4.9A SOT223
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 55V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.9A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V
    Njia ya Kutumia (Max) @ Id, Vgs : 40 mOhm @ 5A, 5V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 5V
    Vgs (Max) : ±13V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 1400pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1.8W (Ta), 8.3W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : SOT-223
    Kifurushi / Kesi : TO-261-4, TO-261AA

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