ON Semiconductor - RFD3055LESM

KEY Part #: K6413429

[13103pcs Hisa]


    Nambari ya Sehemu:
    RFD3055LESM
    Mzalishaji:
    ON Semiconductor
    Maelezo ya kina:
    MOSFET N-CH 60V 11A TO-252AA.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Ushirikiano uliopangwa, Thyristors - SCR, Viwango - Zener - Arrays and Transistors - FET, MOSFETs - Arrays ...
    Faida ya Ushindani:
    We specialize in ON Semiconductor RFD3055LESM electronic components. RFD3055LESM can be shipped within 24 hours after order. If you have any demands for RFD3055LESM, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RFD3055LESM Sifa za Bidhaa

    Nambari ya Sehemu : RFD3055LESM
    Mzalishaji : ON Semiconductor
    Maelezo : MOSFET N-CH 60V 11A TO-252AA
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 60V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V
    Njia ya Kutumia (Max) @ Id, Vgs : 107 mOhm @ 8A, 5V
    Vgs (th) (Max) @ Id : 3V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 11.3nC @ 10V
    Vgs (Max) : ±16V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 350pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 38W (Tc)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : TO-252AA
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63