RW1E025RPT2CR Bei (USD) [1208286pcs Hisa]
- 1 pcs$0.03384
- 8,000 pcs$0.03367
- Nambari ya Sehemu:
- RW1E025RPT2CR
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET P-CH 30V 2.5A WEMT6.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Viwango - Zener - Arrays, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RW1E025RPT2CR electronic components. RW1E025RPT2CR can be shipped within 24 hours after order. If you have any demands for RW1E025RPT2CR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RW1E025RPT2CR Sifa za Bidhaa
Nambari ya Sehemu :
RW1E025RPT2CR
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET P-CH 30V 2.5A WEMT6
Mfululizo :
-
Hali ya Sehemu :
Not For New Designs
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
75 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
5.2nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
480pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
700mW (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
6-WEMT
Kifurushi / Kesi :
SOT-563, SOT-666
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