NP100P04PDG-E1-AY Bei (USD) [1573pcs Hisa]
- 800 pcs$1.33215
- Nambari ya Sehemu:
- NP100P04PDG-E1-AY
- Mzalishaji:
- Renesas Electronics America
- Maelezo ya kina:
- MOSFET P-CH 40V 100A TO-263.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Moduli za Dereva za Nguvu, Thyristors - TRIAC, Thyristors - DIAC, SIDAC, Viwango - Zener - Arrays, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Renesas Electronics America NP100P04PDG-E1-AY electronic components. NP100P04PDG-E1-AY can be shipped within 24 hours after order. If you have any demands for NP100P04PDG-E1-AY, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
NP100P04PDG-E1-AY Sifa za Bidhaa
Nambari ya Sehemu :
NP100P04PDG-E1-AY
Mzalishaji :
Renesas Electronics America
Maelezo :
MOSFET P-CH 40V 100A TO-263
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
3.5 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
320nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
15100pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1.8W (Ta), 200W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
TO-263
Kifurushi / Kesi :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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