IXYS - IXGR55N120A3H1

KEY Part #: K6423254

IXGR55N120A3H1 Bei (USD) [6594pcs Hisa]

  • 1 pcs$6.57963
  • 30 pcs$6.54689

Nambari ya Sehemu:
IXGR55N120A3H1
Mzalishaji:
IXYS
Maelezo ya kina:
IGBT 1200V 70A 200W ISOPLUS247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moja, Viwango - RF, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in IXYS IXGR55N120A3H1 electronic components. IXGR55N120A3H1 can be shipped within 24 hours after order. If you have any demands for IXGR55N120A3H1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXGR55N120A3H1 Sifa za Bidhaa

Nambari ya Sehemu : IXGR55N120A3H1
Mzalishaji : IXYS
Maelezo : IGBT 1200V 70A 200W ISOPLUS247
Mfululizo : GenX3™
Hali ya Sehemu : Active
Aina ya IGBT : PT
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 70A
Sasa - Mtoza Ushuru (Icm) : 330A
Vce (on) (Max) @ Vge, Ic : 2.35V @ 15V, 55A
Nguvu - Max : 200W
Kubadilisha Nishati : 5.1mJ (on), 13.3mJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 185nC
Td (on / off) @ 25 ° C : 23ns/365ns
Hali ya Uchunguzi : 960V, 55A, 3 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 200ns
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3
Kifurushi cha Kifaa cha Mtoaji : ISOPLUS247™