ON Semiconductor - NGTB10N60R2DT4G

KEY Part #: K6424674

NGTB10N60R2DT4G Bei (USD) [9228pcs Hisa]

  • 2,500 pcs$0.24215
  • 5,000 pcs$0.23062

Nambari ya Sehemu:
NGTB10N60R2DT4G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
IGBT 10A 600V DPAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Kusudi Maalum, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor NGTB10N60R2DT4G electronic components. NGTB10N60R2DT4G can be shipped within 24 hours after order. If you have any demands for NGTB10N60R2DT4G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NGTB10N60R2DT4G Sifa za Bidhaa

Nambari ya Sehemu : NGTB10N60R2DT4G
Mzalishaji : ON Semiconductor
Maelezo : IGBT 10A 600V DPAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
Sasa - Mtoza (Ic) (Max) : 20A
Sasa - Mtoza Ushuru (Icm) : 40A
Vce (on) (Max) @ Vge, Ic : 2.1V @ 15V, 10A
Nguvu - Max : 72W
Kubadilisha Nishati : 412µJ (on), 140µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 53nC
Td (on / off) @ 25 ° C : 48ns/120ns
Hali ya Uchunguzi : 300V, 10A, 30 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 90ns
Joto la Kufanya kazi : 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji : DPAK