Nambari ya Sehemu :
HGTD1N120BNS9A
Mzalishaji :
ON Semiconductor
Maelezo :
IGBT 1200V 5.3A 60W TO252AA
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
5.3A
Sasa - Mtoza Ushuru (Icm) :
6A
Vce (on) (Max) @ Vge, Ic :
2.9V @ 15V, 1A
Kubadilisha Nishati :
70µJ (on), 90µJ (off)
Aina ya Kuingiza :
Standard
Td (on / off) @ 25 ° C :
15ns/67ns
Hali ya Uchunguzi :
960V, 1A, 82 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) :
-
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-252AA