RQ3E100BNTB Bei (USD) [871993pcs Hisa]
- 1 pcs$0.04689
- 3,000 pcs$0.04666
- Nambari ya Sehemu:
- RQ3E100BNTB
- Mzalishaji:
- Rohm Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 30V 10A HSMT8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Kufika, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - IGBTs - Arrays, Thyristors - SCRs - Moduli and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Rohm Semiconductor RQ3E100BNTB electronic components. RQ3E100BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E100BNTB, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RQ3E100BNTB Sifa za Bidhaa
Nambari ya Sehemu :
RQ3E100BNTB
Mzalishaji :
Rohm Semiconductor
Maelezo :
MOSFET N-CH 30V 10A HSMT8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
10.4 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
22nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2W (Ta)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
8-HSMT (3.2x3)
Kifurushi / Kesi :
8-PowerVDFN
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