Nambari ya Sehemu :
FDPF4D5N10C
Mzalishaji :
ON Semiconductor
Maelezo :
FET ENGR DEV-NOT REL
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
128A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
4.5 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id :
4V @ 310µA
Malango ya Lango (Qg) (Max) @ Vgs :
68nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5065pF @ 50V
Kuondoa Nguvu (Max) :
2.4W (Ta), 37.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-220F
Kifurushi / Kesi :
TO-220-3 Full Pack