Taiwan Semiconductor Corporation - TSM033NB04CR RLG

KEY Part #: K6403434

TSM033NB04CR RLG Bei (USD) [182316pcs Hisa]

  • 1 pcs$0.20288

Nambari ya Sehemu:
TSM033NB04CR RLG
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
MOSFET SINGLE N-CHANNEL TRENCH.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Thyristors - SCRs - Moduli, Viwango - Bridge Rectifiers, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Arrays and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM033NB04CR RLG Sifa za Bidhaa

Nambari ya Sehemu : TSM033NB04CR RLG
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : MOSFET SINGLE N-CHANNEL TRENCH
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 21A (Ta), 121A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.3 mOhm @ 21A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 77nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5022pF @ 20V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.1W (Ta), 107W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-PDFN (5x6)
Kifurushi / Kesi : 8-PowerTDFN