Vishay Siliconix - SIA915DJ-T4-GE3

KEY Part #: K6523442

[4164pcs Hisa]


    Nambari ya Sehemu:
    SIA915DJ-T4-GE3
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET 2P-CH 30V SC70-6.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Arrays, Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix SIA915DJ-T4-GE3 electronic components. SIA915DJ-T4-GE3 can be shipped within 24 hours after order. If you have any demands for SIA915DJ-T4-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SIA915DJ-T4-GE3 Sifa za Bidhaa

    Nambari ya Sehemu : SIA915DJ-T4-GE3
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET 2P-CH 30V SC70-6
    Mfululizo : TrenchFET®
    Hali ya Sehemu : Obsolete
    Aina ya FET : 2 P-Channel (Dual)
    Makala ya FET : Standard
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.7A (Ta), 4.5A (Tc)
    Njia ya Kutumia (Max) @ Id, Vgs : 87 mOhm @ 2.9A, 10V
    Vgs (th) (Max) @ Id : 2.2V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 9nC @ 10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 275pF @ 15V
    Nguvu - Max : 1.9W (Ta), 6.5W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : PowerPAK® SC-70-6 Dual
    Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SC-70-6 Dual