Nambari ya Sehemu :
FQI8N60CTU
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 600V 7.5A I2PAK
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
7.5A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1.2 Ohm @ 3.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
36nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1255pF @ 25V
Kuondoa Nguvu (Max) :
3.13W (Ta), 147W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I2PAK (TO-262)
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA