Toshiba Semiconductor and Storage - TK4R3E06PL,S1X

KEY Part #: K6400923

TK4R3E06PL,S1X Bei (USD) [47232pcs Hisa]

  • 1 pcs$0.91146
  • 50 pcs$0.73469
  • 100 pcs$0.66123
  • 500 pcs$0.51430
  • 1,000 pcs$0.42613

Nambari ya Sehemu:
TK4R3E06PL,S1X
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - TRIAC, Moduli za Dereva za Nguvu, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TK4R3E06PL,S1X electronic components. TK4R3E06PL,S1X can be shipped within 24 hours after order. If you have any demands for TK4R3E06PL,S1X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK4R3E06PL,S1X Sifa za Bidhaa

Nambari ya Sehemu : TK4R3E06PL,S1X
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : X35 PB-F POWER MOSFET TRANSISTOR
Mfululizo : U-MOSIX-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7.2 mOhm @ 15A, 4.5V
Vgs (th) (Max) @ Id : 2.5V @ 500µA
Malango ya Lango (Qg) (Max) @ Vgs : 48.2nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3280pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 87W (Tc)
Joto la Kufanya kazi : 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220
Kifurushi / Kesi : TO-220-3