Diodes Incorporated - DMJ70H601SK3-13

KEY Part #: K6392971

DMJ70H601SK3-13 Bei (USD) [63780pcs Hisa]

  • 1 pcs$0.61305

Nambari ya Sehemu:
DMJ70H601SK3-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CHANNEL 700V 8A TO252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - TRIAC, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - SCR and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMJ70H601SK3-13 electronic components. DMJ70H601SK3-13 can be shipped within 24 hours after order. If you have any demands for DMJ70H601SK3-13, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMJ70H601SK3-13 Sifa za Bidhaa

Nambari ya Sehemu : DMJ70H601SK3-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CHANNEL 700V 8A TO252
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 700V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 2.1A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 20.9nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 686pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 125W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-252, (D-Pak)
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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