[2737pcs Hisa]
- Nambari ya Sehemu:
- IPD25N06S4L30ATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 60V 25A TO252-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Transistors - Kusudi Maalum, Transistors - IGBTs - Moja, Thyristors - SCRs - Moduli and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPD25N06S4L30ATMA1 electronic components. IPD25N06S4L30ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD25N06S4L30ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD25N06S4L30ATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPD25N06S4L30ATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 60V 25A TO252-3
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Discontinued at Digi-Key
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
25A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
30 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id :
2.2V @ 8µA
Malango ya Lango (Qg) (Max) @ Vgs :
16.3nC @ 10V
Vgs (Max) :
±16V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1220pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
29W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TO252-3-11
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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