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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
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  4. Transistors - FET, MOSFETs - Moja
  5. NTMFS4C06NT1G

ON Semiconductor - NTMFS4C06NT1G

KEY Part #: K6394391

NTMFS4C06NT1G Bei (USD) [289888pcs Hisa]

  • 1 pcs$0.12759
  • 3,000 pcs$0.11563
Nambari ya Sehemu:
NTMFS4C06NT1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 11A SO8FL.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Zener - Arrays, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF, Thyristors - SCR, Transistors - IGBTs - Moja and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in ON Semiconductor NTMFS4C06NT1G electronic components. NTMFS4C06NT1G can be shipped within 24 hours after order. If you have any demands for NTMFS4C06NT1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NTMFS4C06NT1G Sifa za Bidhaa

Nambari ya Sehemu : NTMFS4C06NT1G
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 11A SO8FL
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 11A (Ta), 69A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 26nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1683pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 770mW (Ta), 30.5W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 5-DFN (5x6) (8-SOFL)
Kifurushi / Kesi : 8-PowerTDFN

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