[3241pcs Hisa]
- Nambari ya Sehemu:
- IXTM35N30
- Mzalishaji:
- IXYS
- Maelezo ya kina:
- POWER MOSFET TO-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Viwango - RF, Transistors - IGBTs - Moduli, Transistors - FET, MOSFETs - RF, Thyristors - SCRs - Moduli and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
- Faida ya Ushindani:
- We specialize in IXYS IXTM35N30 electronic components. IXTM35N30 can be shipped within 24 hours after order. If you have any demands for IXTM35N30, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IXTM35N30 Sifa za Bidhaa
Nambari ya Sehemu :
IXTM35N30
Mzalishaji :
IXYS
Maelezo :
POWER MOSFET TO-3
Mfululizo :
GigaMOS™
Hali ya Sehemu :
Last Time Buy
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
300V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
35A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 17.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4600pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
300W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-204AE
Kifurushi / Kesi :
TO-204AE
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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