[8742pcs Hisa]
- Nambari ya Sehemu:
- APTM100DA18CT1G
- Mzalishaji:
- Microsemi Corporation
- Maelezo ya kina:
- MOSFET N-CH 1000V 40A SP1.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Moja, Thyristors - SCR, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Kusudi Maalum and Viwango - Bridge Rectifiers ...
- Faida ya Ushindani:
- We specialize in Microsemi Corporation APTM100DA18CT1G electronic components. APTM100DA18CT1G can be shipped within 24 hours after order. If you have any demands for APTM100DA18CT1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APTM100DA18CT1G Sifa za Bidhaa
Nambari ya Sehemu :
APTM100DA18CT1G
Mzalishaji :
Microsemi Corporation
Maelezo :
MOSFET N-CH 1000V 40A SP1
Mfululizo :
POWER MOS 8™
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
1000V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
216 mOhm @ 33A, 10V
Vgs (th) (Max) @ Id :
5V @ 2.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
570nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
14800pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
657W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SP1
Kifurushi / Kesi :
SP1
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