Diodes Incorporated - DMN65D8LQ-13

KEY Part #: K6416382

DMN65D8LQ-13 Bei (USD) [2914348pcs Hisa]

  • 1 pcs$0.01269
  • 10,000 pcs$0.01109

Nambari ya Sehemu:
DMN65D8LQ-13
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET N-CH 60V SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Transistors - JFETs, Viwango - Rectifiers - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMN65D8LQ-13 Sifa za Bidhaa

Nambari ya Sehemu : DMN65D8LQ-13
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET N-CH 60V SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 310mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3 Ohm @ 115mA, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 0.87nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 22pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 370mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3