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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  4. Transistors - IGBTs - Moja
  5. APT25GP90BDQ1G

Microsemi Corporation - APT25GP90BDQ1G

KEY Part #: K6423432

APT25GP90BDQ1G Bei (USD) [9614pcs Hisa]

  • 1 pcs$4.28639
  • 57 pcs$4.28639
Nambari ya Sehemu:
APT25GP90BDQ1G
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
IGBT 900V 72A 417W TO247.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Microsemi Corporation APT25GP90BDQ1G electronic components. APT25GP90BDQ1G can be shipped within 24 hours after order. If you have any demands for APT25GP90BDQ1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT25GP90BDQ1G Sifa za Bidhaa

Nambari ya Sehemu : APT25GP90BDQ1G
Mzalishaji : Microsemi Corporation
Maelezo : IGBT 900V 72A 417W TO247
Mfululizo : POWER MOS 7®
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : PT
Voltage - Kukusanya Emitter Kuvunja (Max) : 900V
Sasa - Mtoza (Ic) (Max) : 72A
Sasa - Mtoza Ushuru (Icm) : 110A
Vce (on) (Max) @ Vge, Ic : 3.9V @ 15V, 25A
Nguvu - Max : 417W
Kubadilisha Nishati : 370µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 110nC
Td (on / off) @ 25 ° C : 13ns/55ns
Hali ya Uchunguzi : 600V, 40A, 4.3 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : TO-247-3
Kifurushi cha Kifaa cha Mtoaji : TO-247 [B]

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