Nambari ya Sehemu :
FGD3N60LSDTM-T
Mzalishaji :
ON Semiconductor
Maelezo :
INTEGRATED CIRCUIT
Hali ya Sehemu :
Obsolete
Voltage - Kukusanya Emitter Kuvunja (Max) :
600V
Sasa - Mtoza (Ic) (Max) :
6A
Sasa - Mtoza Ushuru (Icm) :
25A
Vce (on) (Max) @ Vge, Ic :
1.5V @ 10V, 3A
Kubadilisha Nishati :
250µJ (on), 1mJ (off)
Aina ya Kuingiza :
Standard
Malango ya Lango :
12.5nC
Td (on / off) @ 25 ° C :
40ns/600ns
Hali ya Uchunguzi :
480V, 3A, 470 Ohm, 10V
Rudisha Wakati wa Kuokoa (trr) :
234ns
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
Kifurushi cha Kifaa cha Mtoaji :
TO-252, (D-Pak)