ON Semiconductor - FDMB3800N

KEY Part #: K6524933

FDMB3800N Bei (USD) [244308pcs Hisa]

  • 1 pcs$0.15215
  • 3,000 pcs$0.15140

Nambari ya Sehemu:
FDMB3800N
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET 2N-CH 30V 4.8A MICROFET.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - RF, Moduli za Dereva za Nguvu, Transistors - JFETs, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDMB3800N electronic components. FDMB3800N can be shipped within 24 hours after order. If you have any demands for FDMB3800N, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMB3800N Sifa za Bidhaa

Nambari ya Sehemu : FDMB3800N
Mzalishaji : ON Semiconductor
Maelezo : MOSFET 2N-CH 30V 4.8A MICROFET
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : 2 N-Channel (Dual)
Makala ya FET : Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 4.8A
Njia ya Kutumia (Max) @ Id, Vgs : 40 mOhm @ 4.8A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 5.6nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 465pF @ 15V
Nguvu - Max : 750mW
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji : 8-MLP, MicroFET (3x1.9)