[79pcs Hisa]
- Nambari ya Sehemu:
- IRF6662TR1PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 8.3A DIRECTFET.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moduli, Viwango - Rectifiers - Moja, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja and Transistors - IGBTs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF6662TR1PBF electronic components. IRF6662TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6662TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6662TR1PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF6662TR1PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 8.3A DIRECTFET
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
8.3A (Ta), 47A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
22 mOhm @ 8.2A, 10V
Vgs (th) (Max) @ Id :
4.9V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
31nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1360pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 89W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET™ MZ
Kifurushi / Kesi :
DirectFET™ Isometric MZ
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