TK33S10N1Z,LQ Bei (USD) [146815pcs Hisa]
- 1 pcs$0.27851
- 2,000 pcs$0.27713
- Nambari ya Sehemu:
- TK33S10N1Z,LQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 100V 33A DPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Thyristors - SCR and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK33S10N1Z,LQ electronic components. TK33S10N1Z,LQ can be shipped within 24 hours after order. If you have any demands for TK33S10N1Z,LQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK33S10N1Z,LQ Sifa za Bidhaa
Nambari ya Sehemu :
TK33S10N1Z,LQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 100V 33A DPAK
Mfululizo :
U-MOSVIII-H
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
33A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
9.7 mOhm @ 16.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 500µA
Malango ya Lango (Qg) (Max) @ Vgs :
28nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2050pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
125W (Tc)
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DPAK+
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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