[2105pcs Hisa]
- Nambari ya Sehemu:
- TK12Q60W,S1VQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N CH 600V 11.5A IPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Viwango - RF, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Thyristors - SCR and Transistors - Bipolar (BJT) - Moja, Iliyopendekezw ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK12Q60W,S1VQ electronic components. TK12Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK12Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK12Q60W,S1VQ Sifa za Bidhaa
Nambari ya Sehemu :
TK12Q60W,S1VQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N CH 600V 11.5A IPAK
Mfululizo :
DTMOSIV
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
11.5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
340 mOhm @ 5.8A, 10V
Vgs (th) (Max) @ Id :
3.7V @ 600µA
Malango ya Lango (Qg) (Max) @ Vgs :
25nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
890pF @ 300V
Makala ya FET :
Super Junction
Kuondoa Nguvu (Max) :
100W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I-PAK
Kifurushi / Kesi :
TO-251-3 Stub Leads, IPak
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