SIA429DJT-T1-GE3 Bei (USD) [383787pcs Hisa]
- 1 pcs$0.09638
- 3,000 pcs$0.09104
- Nambari ya Sehemu:
- SIA429DJT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CH 20V 12A SC-70.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Viwango - RF and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIA429DJT-T1-GE3 electronic components. SIA429DJT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA429DJT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA429DJT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIA429DJT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CH 20V 12A SC-70
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
12A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
20.5 mOhm @ 6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
62nC @ 8V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1750pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
3.5W (Ta), 19W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SC-70-6 Single
Kifurushi / Kesi :
PowerPAK® SC-70-6
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