Nambari ya Sehemu :
APTSM120AM55CT1AG
Mzalishaji :
Microsemi Corporation
Maelezo :
POWER MODULE - SIC
Aina ya FET :
2 N-Channel (Dual), Schottky
Makala ya FET :
Silicon Carbide (SiC)
Kukata kwa Voltage Voltage (Vdss) :
1200V (1.2kV)
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
74A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
50 mOhm @ 40A, 20V
Vgs (th) (Max) @ Id :
3V @ 2mA
Malango ya Lango (Qg) (Max) @ Vgs :
272nC @ 20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
5120pF @ 1000V
Joto la Kufanya kazi :
-40°C ~ 175°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi cha Kifaa cha Mtoaji :
SP1