Toshiba Semiconductor and Storage - TPN1R603PL,L1Q

KEY Part #: K6409708

TPN1R603PL,L1Q Bei (USD) [177661pcs Hisa]

  • 1 pcs$0.21865
  • 5,000 pcs$0.21756

Nambari ya Sehemu:
TPN1R603PL,L1Q
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - JFETs, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Thyristors - SCR, Transistors - IGBTs - Moduli, Transistors - IGBTs - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage TPN1R603PL,L1Q electronic components. TPN1R603PL,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1R603PL,L1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TPN1R603PL,L1Q Sifa za Bidhaa

Nambari ya Sehemu : TPN1R603PL,L1Q
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : X35 PB-F POWER MOSFET TRANSISTOR
Mfululizo : U-MOSIX-H
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 1.6 mOhm @ 40A, 10V
Vgs (th) (Max) @ Id : 2.1V @ 300µA
Malango ya Lango (Qg) (Max) @ Vgs : 41nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 3900pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 104W (Tc)
Joto la Kufanya kazi : 175°C
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-TSON Advance (3.3x3.3)
Kifurushi / Kesi : 8-PowerVDFN