TK31V60W5,LVQ Bei (USD) [47544pcs Hisa]
- 1 pcs$0.86371
- 2,500 pcs$0.85941
- Nambari ya Sehemu:
- TK31V60W5,LVQ
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N -CH 600V 30.8A DFN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - JFETs, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Moja and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK31V60W5,LVQ electronic components. TK31V60W5,LVQ can be shipped within 24 hours after order. If you have any demands for TK31V60W5,LVQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31V60W5,LVQ Sifa za Bidhaa
Nambari ya Sehemu :
TK31V60W5,LVQ
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N -CH 600V 30.8A DFN
Mfululizo :
DTMOSIV
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
30.8A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
109 mOhm @ 15.4A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 1.5mA
Malango ya Lango (Qg) (Max) @ Vgs :
105nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3000pF @ 300V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
240W (Tc)
Joto la Kufanya kazi :
150°C (TA)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-DFN-EP (8x8)
Kifurushi / Kesi :
4-VSFN Exposed Pad
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