[73pcs Hisa]
- Nambari ya Sehemu:
- IRF6628TR1PBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 25V 27A DIRECTFET.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Rectifiers - Arrays, Moduli za Dereva za Nguvu, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja and Transistors - Bipolar (BJT) - Moja ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF6628TR1PBF electronic components. IRF6628TR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6628TR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6628TR1PBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF6628TR1PBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 25V 27A DIRECTFET
Mfululizo :
HEXFET®
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
25V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
27A (Ta), 160A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.5 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id :
2.35V @ 100µA
Malango ya Lango (Qg) (Max) @ Vgs :
47nC @ 4.5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3770pF @ 15V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.8W (Ta), 96W (Tc)
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
DIRECTFET™ MX
Kifurushi / Kesi :
DirectFET™ Isometric MX
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