SI2319DDS-T1-GE3 Bei (USD) [479744pcs Hisa]
- 1 pcs$0.07710
- Nambari ya Sehemu:
- SI2319DDS-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CHAN 40V.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Thyristors - DIAC, SIDAC, Viwango - Rectifiers - Arrays, Thyristors - SCR, Viwango - Zener - Moja and Transistors - FET, MOSFETs - RF ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI2319DDS-T1-GE3 electronic components. SI2319DDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2319DDS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2319DDS-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SI2319DDS-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CHAN 40V
Mfululizo :
TrenchFET® Gen III
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.7A (Ta), 3.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
75 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
650pF @ 20V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
1W (Ta), 1.7W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
SOT-23-3 (TO-236)
Kifurushi / Kesi :
TO-236-3, SC-59, SOT-23-3
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