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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDMC8882

ON Semiconductor - FDMC8882

KEY Part #: K6416274

FDMC8882 Bei (USD) [370615pcs Hisa]

  • 1 pcs$0.09980
  • 3,000 pcs$0.07216
Nambari ya Sehemu:
FDMC8882
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 30V 8-MLP.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika and Viwango - Rectifiers - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDMC8882 electronic components. FDMC8882 can be shipped within 24 hours after order. If you have any demands for FDMC8882, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDMC8882 Sifa za Bidhaa

Nambari ya Sehemu : FDMC8882
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 30V 8-MLP
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10.5A (Ta), 16A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 14.3 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 20nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 945pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.3W (Ta), 18W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-MLP (3.3x3.3)
Kifurushi / Kesi : 8-PowerWDFN

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