[12335pcs Hisa]
- Nambari ya Sehemu:
- STB25NM60N-1
- Mzalishaji:
- STMicroelectronics
- Maelezo ya kina:
- MOSFET N-CH 600V 21A I2PAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu, Viwango - Rectifiers - Arrays, Thyristors - DIAC, SIDAC, Transistors - FET, MOSFETs - Arrays, Transistors - JFETs and Transistors - Bipolar (BJT) - Kufika ...
- Faida ya Ushindani:
- We specialize in STMicroelectronics STB25NM60N-1 electronic components. STB25NM60N-1 can be shipped within 24 hours after order. If you have any demands for STB25NM60N-1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
STB25NM60N-1 Sifa za Bidhaa
Nambari ya Sehemu :
STB25NM60N-1
Mzalishaji :
STMicroelectronics
Maelezo :
MOSFET N-CH 600V 21A I2PAK
Mfululizo :
MDmesh™ II
Hali ya Sehemu :
Obsolete
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
21A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
160 mOhm @ 10.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
84nC @ 10V
Vgs (Max) :
±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2400pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
160W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
I2PAK
Kifurushi / Kesi :
TO-262-3 Long Leads, I²Pak, TO-262AA
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