DMT6007LFGQ-13 Bei (USD) [183252pcs Hisa]
- 1 pcs$0.20184
- Nambari ya Sehemu:
- DMT6007LFGQ-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET BVDSS 41V-60V POWERDI333.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - Moja, Transistors - JFETs, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Thyristors - TRIAC and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMT6007LFGQ-13 electronic components. DMT6007LFGQ-13 can be shipped within 24 hours after order. If you have any demands for DMT6007LFGQ-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMT6007LFGQ-13 Sifa za Bidhaa
Nambari ya Sehemu :
DMT6007LFGQ-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET BVDSS 41V-60V POWERDI333
Mfululizo :
Automotive, AEC-Q101
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
15A (Ta), 80A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
41.3nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2090pF @ 30V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
2.2W (Ta), 62.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerVDFN
Habari mpya kabisa
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