Vishay Siliconix - IRF610L

KEY Part #: K6414503

[12733pcs Hisa]


    Nambari ya Sehemu:
    IRF610L
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 200V 3.3A TO-262.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Kufika, Thyristors - SCRs - Moduli, Transistors - Kusudi Maalum, Viwango - Zener - Arrays, Transistors - JFETs and Transistors - IGBTs - Arrays ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix IRF610L electronic components. IRF610L can be shipped within 24 hours after order. If you have any demands for IRF610L, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRF610L Sifa za Bidhaa

    Nambari ya Sehemu : IRF610L
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 200V 3.3A TO-262
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 200V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.3A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 1.5 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 4V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 8.2nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 140pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 3W (Ta), 36W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : TO-262
    Kifurushi / Kesi : TO-262-3 Long Leads, I²Pak, TO-262AA

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