SQJ431AEP-T1_GE3 Bei (USD) [117505pcs Hisa]
- 1 pcs$0.31477
- Nambari ya Sehemu:
- SQJ431AEP-T1_GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET P-CHAN 200V.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - IGBTs - Moja, Transistors - JFETs, Thyristors - DIAC, SIDAC, Thyristors - SCR, Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SQJ431AEP-T1_GE3 electronic components. SQJ431AEP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ431AEP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ431AEP-T1_GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SQJ431AEP-T1_GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET P-CHAN 200V
Mfululizo :
Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
P-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
9.4A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
305 mOhm @ 3.8A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
85nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
3700pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
68W (Tc)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerPAK® SO-8
Kifurushi / Kesi :
8-PowerTDFN
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