SIZF920DT-T1-GE3 Bei (USD) [102903pcs Hisa]
- 1 pcs$0.37998
- Nambari ya Sehemu:
- SIZF920DT-T1-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET DL N-CH 30V POWERPAIR 6X5.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Thyristors - DIAC, SIDAC, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Viwango - Zener - Moja, Transistors - IGBTs - Moduli, Transistors - Ushirikiano uliopangwa and Viwango - Rectifiers - Moja ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIZF920DT-T1-GE3 electronic components. SIZF920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF920DT-T1-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIZF920DT-T1-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET DL N-CH 30V POWERPAIR 6X5
Mfululizo :
TrenchFET® Gen IV
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual), Schottky
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Njia ya Kutumia (Max) @ Id, Vgs :
3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
29nC @ 10V, 125nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1300pF @ 15V, 5230pF @ 15V
Nguvu - Max :
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-PowerWDFN
Kifurushi cha Kifaa cha Mtoaji :
8-PowerPair® (6x5)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
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