SIHU2N80E-GE3 Bei (USD) [53440pcs Hisa]
- 1 pcs$0.73167
- Nambari ya Sehemu:
- SIHU2N80E-GE3
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 800V 2.8A IPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers and Thyristors - SCR ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SIHU2N80E-GE3 electronic components. SIHU2N80E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHU2N80E-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIHU2N80E-GE3 Sifa za Bidhaa
Nambari ya Sehemu :
SIHU2N80E-GE3
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 800V 2.8A IPAK
Mfululizo :
E
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.8A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.75 Ohm @ 1A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
19.6nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
315pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
62.5W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
IPAK (TO-251)
Kifurushi / Kesi :
TO-251-3 Long Leads, IPak, TO-251AB
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