[2595pcs Hisa]
- Nambari ya Sehemu:
- IPU80R2K8CEBKMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 800V 1.9A TO251-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Moduli za Dereva za Nguvu, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IPU80R2K8CEBKMA1 electronic components. IPU80R2K8CEBKMA1 can be shipped within 24 hours after order. If you have any demands for IPU80R2K8CEBKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPU80R2K8CEBKMA1 Sifa za Bidhaa
Nambari ya Sehemu :
IPU80R2K8CEBKMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 800V 1.9A TO251-3
Mfululizo :
CoolMOS™
Hali ya Sehemu :
Discontinued at Digi-Key
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1.9A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.8 Ohm @ 1.1A, 10V
Vgs (th) (Max) @ Id :
3.9V @ 120µA
Malango ya Lango (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
290pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
42W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
PG-TO251-3
Kifurushi / Kesi :
TO-251-3 Short Leads, IPak, TO-251AA
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