Vishay Siliconix - SI4103DY-T1-GE3

KEY Part #: K6403488

SI4103DY-T1-GE3 Bei (USD) [281791pcs Hisa]

  • 1 pcs$0.13126

Nambari ya Sehemu:
SI4103DY-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CHAN 30V SO-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - IGBTs - Moduli, Thyristors - TRIAC, Transistors - IGBTs - Moja, Viwango - RF, Transistors - Bipolar (BJT) - Kufika, Moduli za Dereva za Nguvu and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI4103DY-T1-GE3 electronic components. SI4103DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4103DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4103DY-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI4103DY-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CHAN 30V SO-8
Mfululizo : TrenchFET® Gen III
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 14A (Ta), 16A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 7.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 140nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5200pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 5.2W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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