Nambari ya Sehemu :
EPC2100ENGRT
Maelezo :
GANFET 2 N-CH 30V 9.5A/38A DIE
Aina ya FET :
2 N-Channel (Half Bridge)
Makala ya FET :
GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta), 40A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 4mA, 2.5V @ 16mA
Malango ya Lango (Qg) (Max) @ Vgs :
4.9nC @ 15V, 19nC @ 15V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
475pF @ 15V, 1960pF @ 15V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die